二碲化鉿晶體百分之99.995 HfTe2(Hafnium Telluride)

二碲化鉿晶體 hfte2(hafnium telluride)
晶體尺寸：~10毫米
電學性能：半金屬
晶體結構：六邊形
晶胞參數：a = b = 0.395 nm, c = 0.666 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
x-ray diffraction on a hfte2 single crystal aligned along the (001) plane. xrd was performed at room temperature using a d8 venture bruker. the 6 xrd peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5, 6
powder x-ray diffraction (xrd) of a single crystal . x-ray diffraction was performed at room temperature using a d8 venture bruker.
stoichiometric analysis of a single crystal by energy-dispersive x-ray spectroscopy (edx).
raman spectrum of a single crystal . measurement was performed with a 785 nm raman system at room temperature.